| PART |
Description |
Maker |
| STPSC606 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| SHD626031 SHD626031D SHD626031N SHD626031P SHD6260 |
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
|
Sensitron Semiconductor
|
| SIDC16D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CS220-35N CS220-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS 35 A, 600 V, SCR, TO-220AB
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| SSR20C100CT |
Schottky Silicon Carbide
|
Solid States Devices, Inc
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| SMBJ5V0 SMBJ7.0A SMBJ5.0A SMBJ6.0A SMBJ90A SMBJ100 |
DEVICES FOR BIPOLAR APPLICATIONS
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:17V)(600W瞬变电压抑制反向隔离电压17V 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:9.0V)(600W瞬变电压抑制反向隔离电压9.0V 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:8.0V)(600W瞬变电压抑制反向隔离电压8.0V 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:7.5V)(600W瞬变电压抑制反向隔离电压7.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:6.5V)(600W瞬变电压抑制反向隔离电压6.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:6.0V)(600W瞬变电压抑制反向隔离电压6.0V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:8.5V)(600W瞬变电压抑制反向隔离电压8.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:22V)(600W瞬变电压抑制反向隔离电压2V
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| C3D04065E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
|
